A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy provid...

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Veröffentlicht in:Journal of applied physics 2018-09, Vol.124 (12)
Hauptverfasser: Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., Vandersypen, L. M. K.
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Sprache:eng
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Zusammenfassung:Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy provides a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5046796