Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors
An all-solid-state AlGaN/GaN based ion-sensitive heterostructure field effect transistor (ISHFET) pH sensor was fabricated by integrating a noble metal (Au) quasi-reference electrode to improve the device stability when measuring the pH value of a small aqueous volume. In this paper, the influence o...
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Veröffentlicht in: | Journal of applied physics 2018-07, Vol.124 (3) |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | An all-solid-state AlGaN/GaN based ion-sensitive heterostructure field effect transistor (ISHFET) pH sensor was fabricated by integrating a noble metal (Au) quasi-reference electrode to improve the device stability when measuring the pH value of a small aqueous volume. In this paper, the influence of the size of the quasi-reference electrode against the stability of the pH readings was investigated. Through optimizing the size of the integrated quasi-reference electrode, the all-solid-state ISHFET pH sensor can sustain stable pH measurements for aqueous solutions of micro-litre size. A sensitivity of 55 mV/pH was achieved by the pH sensor at room temperature. Thus, the device may have potential uses in biomedical applications which require small volume pH measurements. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.5034367 |