Spin torque diode effect of the magnetic tunnel junction with MnGa free layer

We fabricated a magnetic tunnel junction (MTJ) using an MgO barrier and MnGa electrode, which shows large magnetic anisotropy, and we investigated the spin torque diode effect in the MTJ. The magnetoresistance ratio increased up to approximately 40% by inserting thin FeB/Fe layers at the MnGa/MgO in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2018-06, Vol.112 (26)
Hauptverfasser:	Tsunegi, Sumito, Mizunuma, Kotaro, Suzuki, Kazuya, Imamura, Hiroshi, Tamaru, Shingo, Yoshimura, Masahiro, Sato, Masashige, Kono, Yasushi, Wado, Hiroyuki, Fukushima, Akio, Kubota, Hitoshi, Mizukami, Shigemi
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustic coupling Applied physics Computer simulation Coupled modes Magnesium oxide Magnetic anisotropy Magnetoresistance Magnetoresistivity Multilayers Precession Thin films Torque Tunnel junctions
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!