Spin torque diode effect of the magnetic tunnel junction with MnGa free layer

Spin torque diode effect of the magnetic tunnel junction with MnGa free layer

We fabricated a magnetic tunnel junction (MTJ) using an MgO barrier and MnGa electrode, which shows large magnetic anisotropy, and we investigated the spin torque diode effect in the MTJ. The magnetoresistance ratio increased up to approximately 40% by inserting thin FeB/Fe layers at the MnGa/MgO in...

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Veröffentlicht in:Applied physics letters 2018-06, Vol.112 (26)
Hauptverfasser: Tsunegi, Sumito, Mizunuma, Kotaro, Suzuki, Kazuya, Imamura, Hiroshi, Tamaru, Shingo, Yoshimura, Masahiro, Sato, Masashige, Kono, Yasushi, Wado, Hiroyuki, Fukushima, Akio, Kubota, Hitoshi, Mizukami, Shigemi
Format: Artikel
Sprache:eng
Schlagworte:
Acoustic coupling
Applied physics
Computer simulation
Coupled modes
Magnesium oxide
Magnetic anisotropy
Magnetoresistance
Magnetoresistivity
Multilayers
Precession
Thin films
Torque
Tunnel junctions
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Zusammenfassung:We fabricated a magnetic tunnel junction (MTJ) using an MgO barrier and MnGa electrode, which shows large magnetic anisotropy, and we investigated the spin torque diode effect in the MTJ. The magnetoresistance ratio increased up to approximately 40% by inserting thin FeB/Fe layers at the MnGa/MgO interface. The obtained diode effect was as high as 70 GHz, which is thought to occur due to the coupled precession acoustic mode in the MnGa/Fe-B multi-layer. Numerical simulation suggests that a very high frequency diode signal of more than 150 GHz can be expected in the optical mode precession.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5032143