Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10–100 μF/cm2) of the el...

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Veröffentlicht in:Applied physics letters 2018-07, Vol.113 (5)
Hauptverfasser: Zare Bidoky, Fazel, Hyun, Woo Jin, Song, Donghoon, Frisbie, C. Daniel
Format: Artikel
Sprache:eng
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Zusammenfassung:Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10–100 μF/cm2) of the electrolyte layer that serves as the gate dielectric. However, electric double layer (EDL) formation at the source/electrolyte and drain/electrolyte interfaces results in significant parasitic capacitance in EGTs which degrades dynamic switching performance. Parasitic capacitance in EGTs is reduced by covering the top surfaces of the source/drain electrodes with a low-ĸ dielectric (∼0.6 nF/cm2). The low-ĸ dielectric blocks EDL formation on the electrode surfaces that are in direct contact with the gate electrolyte, reducing the parasitic capacitance by a factor of 104 and providing a route to printed P3HT EGTs on plastic operating at switching frequencies exceeding 10 kHz with 1 V supply voltages.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5025475