Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic
Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10–100 μF/cm2) of the el...
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Veröffentlicht in: | Applied physics letters 2018-07, Vol.113 (5) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low
voltage operation, high transconductance, good operational stability, and low contact
resistance. These characteristics derive from the massive electrochemical or double layer
capacitance (∼10–100 μF/cm2) of the electrolyte
layer that serves as the gate dielectric. However, electric double layer (EDL) formation
at the source/electrolyte and drain/electrolyte interfaces results in significant
parasitic capacitance in EGTs which degrades dynamic switching performance. Parasitic
capacitance in EGTs is reduced by covering the top surfaces of the source/drain electrodes
with a low-ĸ dielectric (∼0.6 nF/cm2). The low-ĸ dielectric blocks EDL
formation on the electrode surfaces that are in direct contact with the gate electrolyte,
reducing the parasitic capacitance by a factor of 104 and providing a route to
printed P3HT EGTs on plastic operating at switching frequencies exceeding 10 kHz with 1 V
supply voltages. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5025475 |