High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures
The correlative use of atom probe tomography (APT) and energy dispersive x-ray spectroscopy in scanning transmission electron microscopy (STEM) allows us to characterize the structure of ZnTe/CdSe superlattices at the nanometre scale. Both techniques reveal the segregation of zinc along [111] stacki...
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Veröffentlicht in: | Applied physics letters 2018-02, Vol.112 (9) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The correlative use of atom probe tomography (APT) and energy dispersive x-ray spectroscopy in scanning transmission electron microscopy (STEM) allows us to characterize the structure of ZnTe/CdSe superlattices at the nanometre scale. Both techniques reveal the segregation of zinc along [111] stacking faults in CdSe layers, which is interpreted as a manifestation of the Suzuki effect. Quantitative measurements reveal a zinc enrichment around 9 at. % correlated with a depletion of cadmium in the stacking faults. Raw concentration data were corrected so as to account for the limited spatial resolution of both STEM and APT techniques. A simple calculation reveals that the stacking faults are almost saturated in Zn atoms (∼66 at. % of Zn) at the expense of Cd that is depleted. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5020440 |