High-frequency rectification in graphene lateral p-n junctions

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a s...

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Veröffentlicht in:	Applied physics letters 2018-01, Vol.112 (4)
Hauptverfasser:	Vasilyev, Yu. B., Vasileva, G. Yu, Novikov, S., Tarasenko, S. A., Danilov, S. N., Ganichev, S. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Dependence Electrical junctions Graphene P-n junctions Photoelectric effect Photoelectric emission Ultraviolet radiation
Online-Zugang:	Volltext
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Zusammenfassung:	We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.5013100