Spin transport properties based on spin gapless semiconductor CoFeMnSi

Spin gapless semiconductors have been regarded as the most promising candidates for spin injection materials due to the complete (100%) spin polarization and the conductivity between half-metals and semiconductors. To explore the potential spintronic applications of the quaternary Heusler alloy CoFe...

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Veröffentlicht in:Applied physics letters 2017-09, Vol.111 (13)
Hauptverfasser: Han, Jiangchao, Feng, Yulin, Yao, Kailun, Gao, G. Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:Spin gapless semiconductors have been regarded as the most promising candidates for spin injection materials due to the complete (100%) spin polarization and the conductivity between half-metals and semiconductors. To explore the potential spintronic applications of the quaternary Heusler alloy CoFeMnSi (CFMS), a recently fabricated spin gapless semiconductor with a high Curie temperature of 620 K, we design the GaAs/CFMS heterostructure and the CFMS/GaAs/CFMS magnetic tunnel junction (MTJ). It is found from the first-principles calculations combined with nonequilibrium Green's function that the heterostructure exhibits an excellent spin filtering effect and spin diode effect and the MTJ has a large tunnel magnetoresistance ratio (up to 2 × 103), which are explained from the calculated spin-dependent band structure and transmission spectrum. These perfect spin transport characteristics make CFMS a promising candidate for spintronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4999288