Gate tunable parallel double quantum dots in InAs double-nanowire devices
We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tun...
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Veröffentlicht in: | Applied physics letters 2017-12, Vol.111 (23) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report fabrication and characterization of InAs nanowire devices with two closely
placed parallel nanowires. The fabrication process we develop includes selective
deposition of the nanowires with micron scale alignment onto predefined finger bottom
gates using a polymer transfer technique. By tuning the double nanowire with the finger
bottom gates, we observed the formation of parallel double quantum dots with one quantum
dot in each nanowire bound by the normal metal contact edges. We report the gate
tunability of the charge states in individual dots as well as the inter-dot electrostatic
coupling. In addition, we fabricate a device with separate normal metal contacts and a
common superconducting contact to the two parallel wires and confirm the dot formation in
each wire from comparison of the transport properties and a superconducting proximity gap
feature for the respective wires. With the fabrication techniques established in this
study, devices can be realized for more advanced experiments on Cooper-pair splitting,
generation of Parafermions, and so on. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4997646 |