Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems
Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1–xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1–xScxN, which originates at, or...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2017-07, Vol.122 (3) |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 3 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 122 |
| creator | Fichtner, Simon Wolff, Niklas Krishnamurthy, Gnanavel Petraru, Adrian Bohse, Sascha Lofink, Fabian Chemnitz, Steffen Kohlstedt, Hermann Kienle, Lorenz Wagner, Bernhard |
| description | Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1–xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1–xScxN, which originates at, or close to, the substrate/Al1–xScxN interface and becomes more pronounced as the Sc content is increased. Based on Transmission electron microscopy, piezoresponse force microscopy, X-ray diffraction, and SEM analysis, it is identified to be the incipient formation of (100) oriented grains. Approaches to successfully reestablish exclusive c-axis orientation up to x = 0.43 are revealed, with electrode pre-treatment and cathode-substrate distance found to exert significant influence. This allows us to present first measurements of the transversal thin film piezoelectric coefficient e31,f and dielectric loss tangent
tan
δ
beyond x = 0.3. |
| doi_str_mv | 10.1063/1.4993908 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4993908</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2116102567</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-edfd75fc69633c76dd36601e992b53610b025fbbbfbad15c4a97b42a532f1ff43</originalsourceid><addsrcrecordid>eNqdkM1KAzEUhYMoWKsL3yDgSmFqMunMNMtS_CkUXajrIZPctCkzSU3S4vgavrApLbh3de_hfJx7OQhdUzKipGT3dDTmnHEyOUEDSiY8q4qCnKIBITnNJrzi5-gihDUhlE4YH6CfuQIbje6NXWJhFXY78NJ1exlXgI2N4LWQgJ03S2NF3DsyE18mJDNE0ZjWxD7teGWWq7bHbxKDXQkrQeFp-4K183hj4NtBCzJ6I3FnpHfZQboOZIKNFC0OfYjQhUt0pkUb4Oo4h-jj8eF99pwtXp_ms-kikyyvYgZKq6rQsuQlY7IqlWJlSShwnjcFKylpSF7opml0IxQt5FjwqhnnomC5plqP2RDdHHI33n1uIcR67bbeppN1TmkKyIuyStTtgUo_h-BB1xtvOuH7mpJ633lN62Pnib07sEGamKpy9n_wzvk_sN4ozX4BCc2Tpg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2116102567</pqid></control><display><type>article</type><title>Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Fichtner, Simon ; Wolff, Niklas ; Krishnamurthy, Gnanavel ; Petraru, Adrian ; Bohse, Sascha ; Lofink, Fabian ; Chemnitz, Steffen ; Kohlstedt, Hermann ; Kienle, Lorenz ; Wagner, Bernhard</creator><creatorcontrib>Fichtner, Simon ; Wolff, Niklas ; Krishnamurthy, Gnanavel ; Petraru, Adrian ; Bohse, Sascha ; Lofink, Fabian ; Chemnitz, Steffen ; Kohlstedt, Hermann ; Kienle, Lorenz ; Wagner, Bernhard</creatorcontrib><description>Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1–xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1–xScxN, which originates at, or close to, the substrate/Al1–xScxN interface and becomes more pronounced as the Sc content is increased. Based on Transmission electron microscopy, piezoresponse force microscopy, X-ray diffraction, and SEM analysis, it is identified to be the incipient formation of (100) oriented grains. Approaches to successfully reestablish exclusive c-axis orientation up to x = 0.43 are revealed, with electrode pre-treatment and cathode-substrate distance found to exert significant influence. This allows us to present first measurements of the transversal thin film piezoelectric coefficient e31,f and dielectric loss tangent
tan
δ
beyond x = 0.3.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4993908</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum nitride ; Applied physics ; Dielectric loss ; Interface stability ; Microelectromechanical systems ; Microscopy ; Morphology ; Performance enhancement ; Piezoelectricity ; Pretreatment ; Scandium ; Substrates ; Thin films ; Transmission electron microscopy ; X-ray diffraction</subject><ispartof>Journal of applied physics, 2017-07, Vol.122 (3)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-edfd75fc69633c76dd36601e992b53610b025fbbbfbad15c4a97b42a532f1ff43</citedby><cites>FETCH-LOGICAL-c327t-edfd75fc69633c76dd36601e992b53610b025fbbbfbad15c4a97b42a532f1ff43</cites><orcidid>0000-0001-7293-5196 ; 0000-0003-1106-6868</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4993908$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Fichtner, Simon</creatorcontrib><creatorcontrib>Wolff, Niklas</creatorcontrib><creatorcontrib>Krishnamurthy, Gnanavel</creatorcontrib><creatorcontrib>Petraru, Adrian</creatorcontrib><creatorcontrib>Bohse, Sascha</creatorcontrib><creatorcontrib>Lofink, Fabian</creatorcontrib><creatorcontrib>Chemnitz, Steffen</creatorcontrib><creatorcontrib>Kohlstedt, Hermann</creatorcontrib><creatorcontrib>Kienle, Lorenz</creatorcontrib><creatorcontrib>Wagner, Bernhard</creatorcontrib><title>Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems</title><title>Journal of applied physics</title><description>Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1–xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1–xScxN, which originates at, or close to, the substrate/Al1–xScxN interface and becomes more pronounced as the Sc content is increased. Based on Transmission electron microscopy, piezoresponse force microscopy, X-ray diffraction, and SEM analysis, it is identified to be the incipient formation of (100) oriented grains. Approaches to successfully reestablish exclusive c-axis orientation up to x = 0.43 are revealed, with electrode pre-treatment and cathode-substrate distance found to exert significant influence. This allows us to present first measurements of the transversal thin film piezoelectric coefficient e31,f and dielectric loss tangent
tan
δ
beyond x = 0.3.</description><subject>Aluminum nitride</subject><subject>Applied physics</subject><subject>Dielectric loss</subject><subject>Interface stability</subject><subject>Microelectromechanical systems</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Performance enhancement</subject><subject>Piezoelectricity</subject><subject>Pretreatment</subject><subject>Scandium</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Transmission electron microscopy</subject><subject>X-ray diffraction</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkM1KAzEUhYMoWKsL3yDgSmFqMunMNMtS_CkUXajrIZPctCkzSU3S4vgavrApLbh3de_hfJx7OQhdUzKipGT3dDTmnHEyOUEDSiY8q4qCnKIBITnNJrzi5-gihDUhlE4YH6CfuQIbje6NXWJhFXY78NJ1exlXgI2N4LWQgJ03S2NF3DsyE18mJDNE0ZjWxD7teGWWq7bHbxKDXQkrQeFp-4K183hj4NtBCzJ6I3FnpHfZQboOZIKNFC0OfYjQhUt0pkUb4Oo4h-jj8eF99pwtXp_ms-kikyyvYgZKq6rQsuQlY7IqlWJlSShwnjcFKylpSF7opml0IxQt5FjwqhnnomC5plqP2RDdHHI33n1uIcR67bbeppN1TmkKyIuyStTtgUo_h-BB1xtvOuH7mpJ633lN62Pnib07sEGamKpy9n_wzvk_sN4ozX4BCc2Tpg</recordid><startdate>20170721</startdate><enddate>20170721</enddate><creator>Fichtner, Simon</creator><creator>Wolff, Niklas</creator><creator>Krishnamurthy, Gnanavel</creator><creator>Petraru, Adrian</creator><creator>Bohse, Sascha</creator><creator>Lofink, Fabian</creator><creator>Chemnitz, Steffen</creator><creator>Kohlstedt, Hermann</creator><creator>Kienle, Lorenz</creator><creator>Wagner, Bernhard</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7293-5196</orcidid><orcidid>https://orcid.org/0000-0003-1106-6868</orcidid></search><sort><creationdate>20170721</creationdate><title>Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems</title><author>Fichtner, Simon ; Wolff, Niklas ; Krishnamurthy, Gnanavel ; Petraru, Adrian ; Bohse, Sascha ; Lofink, Fabian ; Chemnitz, Steffen ; Kohlstedt, Hermann ; Kienle, Lorenz ; Wagner, Bernhard</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-edfd75fc69633c76dd36601e992b53610b025fbbbfbad15c4a97b42a532f1ff43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum nitride</topic><topic>Applied physics</topic><topic>Dielectric loss</topic><topic>Interface stability</topic><topic>Microelectromechanical systems</topic><topic>Microscopy</topic><topic>Morphology</topic><topic>Performance enhancement</topic><topic>Piezoelectricity</topic><topic>Pretreatment</topic><topic>Scandium</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Transmission electron microscopy</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fichtner, Simon</creatorcontrib><creatorcontrib>Wolff, Niklas</creatorcontrib><creatorcontrib>Krishnamurthy, Gnanavel</creatorcontrib><creatorcontrib>Petraru, Adrian</creatorcontrib><creatorcontrib>Bohse, Sascha</creatorcontrib><creatorcontrib>Lofink, Fabian</creatorcontrib><creatorcontrib>Chemnitz, Steffen</creatorcontrib><creatorcontrib>Kohlstedt, Hermann</creatorcontrib><creatorcontrib>Kienle, Lorenz</creatorcontrib><creatorcontrib>Wagner, Bernhard</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fichtner, Simon</au><au>Wolff, Niklas</au><au>Krishnamurthy, Gnanavel</au><au>Petraru, Adrian</au><au>Bohse, Sascha</au><au>Lofink, Fabian</au><au>Chemnitz, Steffen</au><au>Kohlstedt, Hermann</au><au>Kienle, Lorenz</au><au>Wagner, Bernhard</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems</atitle><jtitle>Journal of applied physics</jtitle><date>2017-07-21</date><risdate>2017</risdate><volume>122</volume><issue>3</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1–xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1–xScxN, which originates at, or close to, the substrate/Al1–xScxN interface and becomes more pronounced as the Sc content is increased. Based on Transmission electron microscopy, piezoresponse force microscopy, X-ray diffraction, and SEM analysis, it is identified to be the incipient formation of (100) oriented grains. Approaches to successfully reestablish exclusive c-axis orientation up to x = 0.43 are revealed, with electrode pre-treatment and cathode-substrate distance found to exert significant influence. This allows us to present first measurements of the transversal thin film piezoelectric coefficient e31,f and dielectric loss tangent
tan
δ
beyond x = 0.3.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4993908</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-7293-5196</orcidid><orcidid>https://orcid.org/0000-0003-1106-6868</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2017-07, Vol.122 (3) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_4993908 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum nitride Applied physics Dielectric loss Interface stability Microelectromechanical systems Microscopy Morphology Performance enhancement Piezoelectricity Pretreatment Scandium Substrates Thin films Transmission electron microscopy X-ray diffraction |
| title | Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T16%3A54%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Identifying%20and%20overcoming%20the%20interface%20originating%20c-axis%20instability%20in%20highly%20Sc%20enhanced%20AlN%20for%20piezoelectric%20micro-electromechanical%20systems&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Fichtner,%20Simon&rft.date=2017-07-21&rft.volume=122&rft.issue=3&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4993908&rft_dat=%3Cproquest_cross%3E2116102567%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2116102567&rft_id=info:pmid/&rfr_iscdi=true |