Transport mechanism of the magnetoresistance effects in Ta/CoFe2O4 nanostructures

We report an investigation of temperature dependent spin Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) in Ta/CoFe2O4 nanostructures. The AMR of the Ta/CoFe2O4 nanostructure starts to appear at 50 K and its magnitude enhances dramatically with the decrease in temperature due to...

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Veröffentlicht in:Applied physics letters 2017-05, Vol.110 (19)
Hauptverfasser: Hui, Yajuan, Cheng, Weiming, Zhang, Zhaobing, Wang, Haiwei, Xie, Changsheng, Miao, Xiangshui
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Sprache:eng
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Zusammenfassung:We report an investigation of temperature dependent spin Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) in Ta/CoFe2O4 nanostructures. The AMR of the Ta/CoFe2O4 nanostructure starts to appear at 50 K and its magnitude enhances dramatically with the decrease in temperature due to the suppressed spin-flip scattering. However, the SMR shows a complex temperature dependence correlated with the thickness of Ta layers. It increases monotonically and slightly with the decrease in temperature in thicker (7 nm) Ta. Moreover, Ta/CoFe2O4 nanostructures with thinner (3 nm) Ta exhibit a significant peak of SMR at about 75 K, probably owing to a good matching between the Ta layer thickness and its spin diffusion length. The fundamental distinct temperature dependences reveal different transport mechanisms of the two magnetoresistance effects. Our results will contribute to the further understanding and optimization of the magnetoresistance effects in spinel magnetic insulator heterojunctions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4983171