A method for direct contact resistance evaluation in low voltage coplanar organic field-effect transistors
In this paper, a method for the extrapolation of contact resistance in organic field-effect transistors (OFETs) from a single transfer characteristic curve in the linear regime is proposed. The method, namely DIrect Contact Resistance Extrapolation (DICRE), is based on the idea of making the current...
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Veröffentlicht in: | Applied physics letters 2017-04, Vol.110 (15) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, a method for the extrapolation of contact resistance in organic
field-effect transistors (OFETs) from a single transfer characteristic curve in
the linear regime is proposed. The method, namely DIrect Contact Resistance
Extrapolation (DICRE), is based on the idea of making the current dependent only
on contact resistance by setting the device in large over-threshold conditions.
Constant contact resistance with respect to gate-to-source voltage is considered
as an acceptable approximation, as confirmed by other examples in the
literature. The effectiveness of the method is demonstrated by extrapolating the
contact resistance of two different OFET structures (self-aligned and not
self-aligned) and comparing the results with standard reference techniques,
namely the Modified Transmission Line Method (M-TLM) and the Y function method.
The results demonstrate that the DICRE method can be applied to low voltage
devices without any damage to the gate insulator, even if the applied
gate-to-source voltage drop is well beyond the values normally employed for
transistor operation. The proposed method allows extrapolating a value of
contact resistance comparable with the ones derived by TLM, with restrained
variability. Moreover, the capability of properly recognizing the differences in
contact resistance values between OFET structures with different features in
terms of source/drain-gate overlap is reported. Finally, the possibility of
correctly deriving the contact resistance dependence on drain-to-source voltage
using DICRE is discussed. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4980069 |