Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

We demonstrated sub-wavelength (∼111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRB...

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Veröffentlicht in:APL photonics 2017-04, Vol.2 (4), p.046106-046106-10
Hauptverfasser: Takiguchi, Masato, Yokoo, Atsushi, Nozaki, Kengo, Birowosuto, Muhammad Danang, Tateno, Kouta, Zhang, Guoqiang, Kuramochi, Eiichi, Shinya, Akihiko, Notomi, Masaya
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Sprache:eng
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Zusammenfassung:We demonstrated sub-wavelength (∼111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRBS) modulation of our CW lasers, we employed a new signal detection technique that employs a superconducting single photon detector and a time-correlated single photon counting module. The results showed that our NW laser was unambiguously modulated at above 10 Gb/s and an open eye pattern was obtained. This is the first demonstration of a telecom-band CW NW laser with high-speed PRBS modulation.
ISSN:2378-0967
2378-0967
DOI:10.1063/1.4977927