Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

We report the results of the high energy (0.9 MeV) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes. Within the range of the irradiation dose from 0.2 × 1016 cm−2 to 7 × 1016 cm−2, electron irradiation led to 6 orders of magnitude increase in the bas...

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Veröffentlicht in:Applied physics letters 2017-02, Vol.110 (8)
Hauptverfasser: Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report the results of the high energy (0.9 MeV) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes. Within the range of the irradiation dose from 0.2 × 1016 cm−2 to 7 × 1016 cm−2, electron irradiation led to 6 orders of magnitude increase in the base resistance, appearance of slow relaxation processes at pico-ampere current range, and increase in the ideality factor.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4977095