Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities
Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-p...
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Veröffentlicht in: | Applied physics letters 2017-01, Vol.110 (3) |
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creator | Kors, A. Fuchs, K. Yacob, M. Reithmaier, J. P. Benyoucef, M. |
description | Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (μ-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 μeV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting. |
doi_str_mv | 10.1063/1.4974207 |
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The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4974207</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Epitaxial growth ; Indium phosphides ; Microcavities ; Molecular beam epitaxy ; Optical properties ; Photoluminescence ; Photonic crystals ; Polarized light ; Quantum dots ; Quantum theory ; Ripening ; Spectral emittance ; Telecommunications ; Wavelengths</subject><ispartof>Applied physics letters, 2017-01, Vol.110 (3)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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P.</creatorcontrib><creatorcontrib>Benyoucef, M.</creatorcontrib><title>Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities</title><title>Applied physics letters</title><description>Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (μ-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 μeV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting.</description><subject>Applied physics</subject><subject>Epitaxial growth</subject><subject>Indium phosphides</subject><subject>Microcavities</subject><subject>Molecular beam epitaxy</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Photonic crystals</subject><subject>Polarized light</subject><subject>Quantum dots</subject><subject>Quantum theory</subject><subject>Ripening</subject><subject>Spectral emittance</subject><subject>Telecommunications</subject><subject>Wavelengths</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkE9LAzEQxYMoWKsHv0HAk8LWTJLdbY5S_FMo6KGeQzabtCm7m-0mW-m3N1LBu5eZecyPecND6BbIDEjBHmHGRckpKc_QBEhZZgxgfo4mhBCWFSKHS3QVwi7JnDI2QXptGqN9i7_UIU3dJm6xaV2MrtvgkEpj8H5UXRxbXPsYsPZj35gaR4-X3UdWqZBEv_XRd05jPRxDVA1unR68VgcXnQnX6MKqJpib3z5Fny_P68Vbtnp_XS6eVplmtIwZL7Q2huc1B8tBc15wVoEWjBLLLJSGGGWF4WlRcWqBVTRXJNdzoQFqxdkU3Z3u9oPfjyZEufPj0CVLSYHyQjAhSKLuT1T6MITBWNkPrlXDUQKRPxlKkL8ZJvbhxAbtoorOd_-DD374A2VfW_YNNUWA0Q</recordid><startdate>20170116</startdate><enddate>20170116</enddate><creator>Kors, A.</creator><creator>Fuchs, K.</creator><creator>Yacob, M.</creator><creator>Reithmaier, J. 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P.</creatorcontrib><creatorcontrib>Benyoucef, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kors, A.</au><au>Fuchs, K.</au><au>Yacob, M.</au><au>Reithmaier, J. P.</au><au>Benyoucef, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities</atitle><jtitle>Applied physics letters</jtitle><date>2017-01-16</date><risdate>2017</risdate><volume>110</volume><issue>3</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (μ-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 μeV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4974207</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-8065-0964</orcidid><orcidid>https://orcid.org/0000-0002-4756-3818</orcidid></addata></record> |
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source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Applied physics Epitaxial growth Indium phosphides Microcavities Molecular beam epitaxy Optical properties Photoluminescence Photonic crystals Polarized light Quantum dots Quantum theory Ripening Spectral emittance Telecommunications Wavelengths |
title | Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities |
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