Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities

Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities

Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-p...

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Veröffentlicht in:Applied physics letters 2017-01, Vol.110 (3)
Hauptverfasser: Kors, A., Fuchs, K., Yacob, M., Reithmaier, J. P., Benyoucef, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Epitaxial growth
Indium phosphides
Microcavities
Molecular beam epitaxy
Optical properties
Photoluminescence
Photonic crystals
Polarized light
Quantum dots
Quantum theory
Ripening
Spectral emittance
Telecommunications
Wavelengths
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Zusammenfassung:Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (μ-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 μeV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4974207