Electric-field-controlled nonvolatile magnetic switching and resistive change in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) heterostructure at room temperature

Control over nonvolatile magnetization rotation and resistivity change by an electric field in La0.6Sr0.4MnO3 thin films grown on (011) oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrates are studied. By utilizing an in-plane strain induced by a side ferroelectric switching with pulsed electric fields...

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Veröffentlicht in:	Applied physics letters 2016-12, Vol.109 (26)
Hauptverfasser:	Zhao, Wenbo, Zhang, Dalong, Meng, Dechao, Huang, Weichuan, Feng, Lei, Hou, Chuangming, Lu, Yalin, Yin, Yuewei, Li, Xiaoguang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Electric fields Electrical resistivity Ferroelectric materials Ferroelectricity Heterostructures Magnetic switching Magnetization Plane strain Room temperature Rotation Substrates Temperature control Thin films
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