Electric-field-controlled nonvolatile magnetic switching and resistive change in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) heterostructure at room temperature

Control over nonvolatile magnetization rotation and resistivity change by an electric field in La0.6Sr0.4MnO3 thin films grown on (011) oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrates are studied. By utilizing an in-plane strain induced by a side ferroelectric switching with pulsed electric fields from −2.5 kV/cm to +5 kV/cm along [ 01 1 ¯ ] , a nonvolatile and reversible 90°-rotation of the magnetic easy-axis is achieved, corresponding to −69.68% and +174.26% magnetization switching along the [100] and [ 01 1 ¯ ] directions, respectively. The strain induced nonvolatile resistivity change is approximately 3.6% along the [ 01 1 ¯ ] direction. These findings highlight potential strategies for electric-field-driven spintronic devices.