Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 × 1018 cm−3 and high crystallinity (Raman FWHM ∼ 4.54 cm−1). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an Ion/Ioff ratio over 105 and drain-induced barrier lowering of 168 mV/V. Moreover, the fast programming speed of 100 μs–1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integration and flexible electronics.