Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

The annealing of sub-critical Ge wetting layers (WL 

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Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2016-05, Vol.119 (20)
Hauptverfasser: Ramalingam, Gopalakrishnan, Floro, Jerrold A., Reinke, Petra
Format: Artikel
Sprache:eng
Schlagworte:
ANNEALING
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONTROL
Crossovers
DEPOSITS
Germanium
LAYERS
LENGTH
MORPHOLOGY
Nanostructure
P-TYPE CONDUCTORS
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
Silicon
STRAINS
TEMPERATURE RANGE 0400-1000 K
THICKNESS
Thin films
THREE-DIMENSIONAL CALCULATIONS
TUNNEL EFFECT
VACANCIES
Wetting
WIDTH
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Beschreibung
Zusammenfassung:The annealing of sub-critical Ge wetting layers (WL 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4952728