A two-step process for growth of highly oriented Sb2Te3 using sputtering

A two-step process for growth of highly oriented Sb2Te3 using sputtering

A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and sub...

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Veröffentlicht in:AIP advances 2016-04, Vol.6 (4), p.045220-045220-5
Hauptverfasser: Saito, Yuta, Fons, Paul, Bolotov, Leonid, Miyata, Noriyuki, Kolobov, Alexander V., Tominaga, Junji
Format: Artikel
Sprache:eng
Schlagworte:
Electronic devices
Sputtering
Superlattices
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Zusammenfassung:A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4948536