Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress
Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission...
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Veröffentlicht in: | AIP advances 2016-04, Vol.6 (4), p.045204-045204-5 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4946850 |