Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission...

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Veröffentlicht in:AIP advances 2016-04, Vol.6 (4), p.045204-045204-5
Hauptverfasser: Su, Dan, Dou, Xiuming, Wu, Xuefei, Liao, Yongping, Zhou, Pengyu, Ding, Kun, Ni, Haiqiao, Niu, Zhichuan, Zhu, Haijun, Jiang, Desheng, Sun, Baoquan
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Sprache:eng
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Zusammenfassung:Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4946850