Raman spectroscopic characterization of germanium-on-insulator nanolayers

Raman spectroscopic characterization of germanium-on-insulator nanolayers

We fabricated Ge-on-insulator monocrystalline nanolayers with thickness H = 1–18 nm using SiO2 substrate and studied their Raman spectra. The spectra display longitudinal optical (LO) phonon and confined acoustic phonon bands. For H 

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Veröffentlicht in:Applied physics letters 2016-02, Vol.108 (8)
Hauptverfasser: Poborchii, Vladimir, Ishii, Hiroyuki, Hattori, Hiroyuki, Chang, Wen-Hsin, Maeda, Tatsuro, Tada, Tetsuya, Geshev, Pavel I.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Germanium
Raman spectra
Reduction
Reflectance
Silicon dioxide
Size effects
Substrates
Thickness
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Zusammenfassung:We fabricated Ge-on-insulator monocrystalline nanolayers with thickness H = 1–18 nm using SiO2 substrate and studied their Raman spectra. The spectra display longitudinal optical (LO) phonon and confined acoustic phonon bands. For H 
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4942607