Energetic semiconductor bridge device incorporating Al/MoO x multilayer nanofilms and negative temperature coefficient thermistor chip

The design, fabrication, and characterization of an energetic semiconductor bridge device are presented. The device consists of a semiconductor bridge heating element, which has been selectively coated with Al/MoOx multilayer nanofilms to enhance ignition of a conventional pyrotechnics. Integrated n...

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Veröffentlicht in:Journal of applied physics 2014-05, Vol.115 (19)
Hauptverfasser: Zhu, Peng, Jiao, Jianshe, Shen, Ruiqi, Ye, Yinghua, Fu, Shuai, Li, Dongle
Format: Artikel
Sprache:eng
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Zusammenfassung:The design, fabrication, and characterization of an energetic semiconductor bridge device are presented. The device consists of a semiconductor bridge heating element, which has been selectively coated with Al/MoOx multilayer nanofilms to enhance ignition of a conventional pyrotechnics. Integrated negative temperature coefficient thermistor chip provides protection against electromagnetic and electrostatic discharge events. The device was specifically configured to allow ease of interconnection by wire bonds and silver-filled conductive epoxy. Extensive design validation testing was performed. The device has demonstrated low, predictable firing energy and insensitivity. Al/MoOx multilayer nanofilms have no distinct influence on the electrical properties of semiconductor bridge. Nanothermite reaction provides reliable ignition by being able to ignite across a gap.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4876264