Temperature-dependent characteristics of junctionless bulk transistor
The temperature-dependent performance, including drain current (Id) and gate capacitance (Cgg) of multi-gate junctionless (JL) bulk transistor for temperature (T) ranging from 150 K to 500 K, was investigated using 3D thermodynamic quantum-corrected device simulation. The combination effect of impur...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2013-09, Vol.103 (13) |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The temperature-dependent performance, including drain current (Id) and gate capacitance (Cgg) of multi-gate junctionless (JL) bulk transistor for temperature (T) ranging from 150 K to 500 K, was investigated using 3D thermodynamic quantum-corrected device simulation. The combination effect of impurity scattering and phonon scattering is observed owing to the different temperature-dependent of mobility at low and high temperature. Since the Cgg of the JL device consists of a series combination of oxide capacitance (Cox) and semiconductor channel capacitance (CS) due to bulk conduction of the current, the Cgg at on-state (Vg = 1 V) shows much sensitive to the temperature than a conventional inversion-mode transistor. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4821747 |