Graphene as tunable transparent electrode material on GaN: Layer-number-dependent optical and electrical properties

Graphene has been regarded as a prospective transparent electrode for a GaN-based light-emitting diode (LED), but fundamental knowledge about the intrinsic properties of the graphene/GaN contact is lacking. We have studied the optical and electronic properties of graphene exfoliated on an n-type GaN...

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Veröffentlicht in:Applied physics letters 2013-08, Vol.103 (8)
Hauptverfasser: Shiu, Hung Wei, Yueh Chang, Lo, Lee, Kai-Hsuan, Chen, Hung-Ying, Gwo, Shangjr, Chen, Chia-Hao
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:Graphene has been regarded as a prospective transparent electrode for a GaN-based light-emitting diode (LED), but fundamental knowledge about the intrinsic properties of the graphene/GaN contact is lacking. We have studied the optical and electronic properties of graphene exfoliated on an n-type GaN surface. The graphene visibility was simulated based on Fresnel's law and confirmed with an optical microscope and micro-Raman spectra. The interfacial electronic property was studied with a scanning photoelectron microscope. We found that the Schottky barrier height of the graphene/n-GaN is decreased with decreasing graphene number of layers, yielding an improved GaN-based LED performance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818787