Effect of growth induced (non)stoichiometry on the thermal conductivity, permittivity, and dielectric loss of LaAlO3 films

The effect of growth-induced non-stoichiometry on the thermal and dielectric properties of pulsed-laser deposited LaAlO3 thin films is explored. The composition of the LaAlO3 films was characterized via X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry and it is revealed th...

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Veröffentlicht in:Applied physics letters 2013-08, Vol.103 (8)
Hauptverfasser: Breckenfeld, E., Wilson, R. B., Martin, L. W.
Format: Artikel
Sprache:eng
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Zusammenfassung:The effect of growth-induced non-stoichiometry on the thermal and dielectric properties of pulsed-laser deposited LaAlO3 thin films is explored. The composition of the LaAlO3 films was characterized via X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry and it is revealed that small deviations in laser fluence result in deviations of cation stoichiometry as large as a few atomic percent. The thermal conductivity is also found to be especially sensitive to non-stoichiometry, with 3%-5% La-excess and La-deficiency resulting in 60%-80% reduction in thermal conductivity. The dielectric constant decreases and the loss tangent increases with increasing non-stoichiometry with differences between La-excess and La-deficiency.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818718