Nanoplasmonic distributed Bragg reflector resonators for monolithic integration on a complementary metal-oxide-semiconductor platform
We present nanoplasmonic Au/SiO2/Si metal-insulator-semiconductor distributed Bragg reflector resonators capable of broadband operation and with the potential for monolithic integration with complementary metal-oxide-semiconductor technology. With a compact device footprint as small as 1.5 μm2 and q...
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Veröffentlicht in: | Applied physics letters 2013-07, Vol.103 (5) |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We present nanoplasmonic Au/SiO2/Si metal-insulator-semiconductor distributed Bragg reflector resonators capable of broadband operation and with the potential for monolithic integration with complementary metal-oxide-semiconductor technology. With a compact device footprint as small as 1.5 μm2 and quality factors as high as 64.4 at λ = 1.545 μm, these resonators have the highest quality factor over device footprint figure of merit yet demonstrated for a silicon nanoplasmonic device. A higher quality factor is shown to be achievable by using smaller gaps in the Bragg reflectors. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4817547 |