Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atom...

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Veröffentlicht in:	Applied physics letters 2013-07, Vol.103 (3)
Hauptverfasser:	Zhang, Yuhao, Sun, Min, Joglekar, Sameer J., Fujishima, Tatsuya, Palacios, Tomás
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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