Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atom...
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Veröffentlicht in: | Applied physics letters 2013-07, Vol.103 (3) |
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creator | Zhang, Yuhao Sun, Min Joglekar, Sameer J. Fujishima, Tatsuya Palacios, Tomás |
description | This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al2O3. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the Vth of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the Vth increases with gate dielectric thickness, exceeding 3.5 V for gate dielectrics 25 nm thick. |
doi_str_mv | 10.1063/1.4815923 |
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Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al2O3. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the Vth of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the Vth increases with gate dielectric thickness, exceeding 3.5 V for gate dielectrics 25 nm thick.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4815923</identifier><language>eng</language><ispartof>Applied physics letters, 2013-07, Vol.103 (3)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-38b3462652fdc074b7cd359720b8cffb294c0ad74e7d78620d6d154fc8ba463f3</citedby><cites>FETCH-LOGICAL-c330t-38b3462652fdc074b7cd359720b8cffb294c0ad74e7d78620d6d154fc8ba463f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Zhang, Yuhao</creatorcontrib><creatorcontrib>Sun, Min</creatorcontrib><creatorcontrib>Joglekar, Sameer J.</creatorcontrib><creatorcontrib>Fujishima, Tatsuya</creatorcontrib><creatorcontrib>Palacios, Tomás</creatorcontrib><title>Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors</title><title>Applied physics letters</title><description>This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al2O3. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the Vth of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. 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Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al2O3. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the Vth of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the Vth increases with gate dielectric thickness, exceeding 3.5 V for gate dielectrics 25 nm thick.</abstract><doi>10.1063/1.4815923</doi><oa>free_for_read</oa></addata></record> |
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title | Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors |
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