Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography

We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is de...

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Veröffentlicht in:Applied physics letters 2013-07, Vol.103 (3)
Hauptverfasser: Seo, Jungho, Cho, Hanchul, Lee, Ju-kyung, Lee, Jinyoung, Busnaina, Ahmed, Lee, HeaYeon
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container_title Applied physics letters
container_volume 103
creator Seo, Jungho
Cho, Hanchul
Lee, Ju-kyung
Lee, Jinyoung
Busnaina, Ahmed
Lee, HeaYeon
description We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is developed to overcome resolution limits of photolithography. High aspect-ratio nanostructures with sub-100 nm of lindewidth were fabricated on wafer-scale substrate without nanolithography techniques. The DODE lithography process presented enabled to pave a way to overcome limitations of nanolithography processes and allowed to manufacture large-scale nanostructures using photolithography and thin film deposition and dry etching processes.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4813738</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4813738</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-13587e9f72b162e5f55662e0e6ab26d4e9096e331766c0b3b4c40f092dd645db3</originalsourceid><addsrcrecordid>eNpNkD1PwzAYhC0EEqUw8A-8Mrj4I3aSERUoSJVYYI4c-3ViVOLIdlW68dNJRAem0-nunuEQumV0xagS92xVVEyUojpDC0bLkgjGqnO0oJQKomrJLtFVSp-TlVyIBfp5DPt2Bzh8ewvYwhiSzz4MWA8WQza9Hzo86CHsfO5DF_XYH7ELER-0g0iS0dN4zkedM8Rhrh-mKu591xOdRjCZRD0h8T7N4diH_B92jS6c3iW4OekSfTw_va9fyPZt87p-2BLDeZ0JE7IqoXYlb5niIJ2UalIKSrdc2QJqWisQgpVKGdqKtjAFdbTm1qpC2lYs0d0f18SQUgTXjNF_6XhsGG3m6xrWnK4Tv3_KY_g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Seo, Jungho ; Cho, Hanchul ; Lee, Ju-kyung ; Lee, Jinyoung ; Busnaina, Ahmed ; Lee, HeaYeon</creator><creatorcontrib>Seo, Jungho ; Cho, Hanchul ; Lee, Ju-kyung ; Lee, Jinyoung ; Busnaina, Ahmed ; Lee, HeaYeon</creatorcontrib><description>We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is developed to overcome resolution limits of photolithography. High aspect-ratio nanostructures with sub-100 nm of lindewidth were fabricated on wafer-scale substrate without nanolithography techniques. The DODE lithography process presented enabled to pave a way to overcome limitations of nanolithography processes and allowed to manufacture large-scale nanostructures using photolithography and thin film deposition and dry etching processes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4813738</identifier><language>eng</language><ispartof>Applied physics letters, 2013-07, Vol.103 (3)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-13587e9f72b162e5f55662e0e6ab26d4e9096e331766c0b3b4c40f092dd645db3</citedby><cites>FETCH-LOGICAL-c229t-13587e9f72b162e5f55662e0e6ab26d4e9096e331766c0b3b4c40f092dd645db3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Seo, Jungho</creatorcontrib><creatorcontrib>Cho, Hanchul</creatorcontrib><creatorcontrib>Lee, Ju-kyung</creatorcontrib><creatorcontrib>Lee, Jinyoung</creatorcontrib><creatorcontrib>Busnaina, Ahmed</creatorcontrib><creatorcontrib>Lee, HeaYeon</creatorcontrib><title>Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography</title><title>Applied physics letters</title><description>We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is developed to overcome resolution limits of photolithography. High aspect-ratio nanostructures with sub-100 nm of lindewidth were fabricated on wafer-scale substrate without nanolithography techniques. The DODE lithography process presented enabled to pave a way to overcome limitations of nanolithography processes and allowed to manufacture large-scale nanostructures using photolithography and thin film deposition and dry etching processes.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpNkD1PwzAYhC0EEqUw8A-8Mrj4I3aSERUoSJVYYI4c-3ViVOLIdlW68dNJRAem0-nunuEQumV0xagS92xVVEyUojpDC0bLkgjGqnO0oJQKomrJLtFVSp-TlVyIBfp5DPt2Bzh8ewvYwhiSzz4MWA8WQza9Hzo86CHsfO5DF_XYH7ELER-0g0iS0dN4zkedM8Rhrh-mKu591xOdRjCZRD0h8T7N4diH_B92jS6c3iW4OekSfTw_va9fyPZt87p-2BLDeZ0JE7IqoXYlb5niIJ2UalIKSrdc2QJqWisQgpVKGdqKtjAFdbTm1qpC2lYs0d0f18SQUgTXjNF_6XhsGG3m6xrWnK4Tv3_KY_g</recordid><startdate>20130715</startdate><enddate>20130715</enddate><creator>Seo, Jungho</creator><creator>Cho, Hanchul</creator><creator>Lee, Ju-kyung</creator><creator>Lee, Jinyoung</creator><creator>Busnaina, Ahmed</creator><creator>Lee, HeaYeon</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130715</creationdate><title>Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography</title><author>Seo, Jungho ; Cho, Hanchul ; Lee, Ju-kyung ; Lee, Jinyoung ; Busnaina, Ahmed ; Lee, HeaYeon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-13587e9f72b162e5f55662e0e6ab26d4e9096e331766c0b3b4c40f092dd645db3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seo, Jungho</creatorcontrib><creatorcontrib>Cho, Hanchul</creatorcontrib><creatorcontrib>Lee, Ju-kyung</creatorcontrib><creatorcontrib>Lee, Jinyoung</creatorcontrib><creatorcontrib>Busnaina, Ahmed</creatorcontrib><creatorcontrib>Lee, HeaYeon</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seo, Jungho</au><au>Cho, Hanchul</au><au>Lee, Ju-kyung</au><au>Lee, Jinyoung</au><au>Busnaina, Ahmed</au><au>Lee, HeaYeon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography</atitle><jtitle>Applied physics letters</jtitle><date>2013-07-15</date><risdate>2013</risdate><volume>103</volume><issue>3</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is developed to overcome resolution limits of photolithography. High aspect-ratio nanostructures with sub-100 nm of lindewidth were fabricated on wafer-scale substrate without nanolithography techniques. The DODE lithography process presented enabled to pave a way to overcome limitations of nanolithography processes and allowed to manufacture large-scale nanostructures using photolithography and thin film deposition and dry etching processes.</abstract><doi>10.1063/1.4813738</doi></addata></record>
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title Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T00%3A09%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Double%20oxide%20deposition%20and%20etching%20nanolithography%20for%20wafer-scale%20nanopatterning%20with%20high-aspect-ratio%20using%20photolithography&rft.jtitle=Applied%20physics%20letters&rft.au=Seo,%20Jungho&rft.date=2013-07-15&rft.volume=103&rft.issue=3&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4813738&rft_dat=%3Ccrossref%3E10_1063_1_4813738%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true