Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography

We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-07, Vol.103 (3)
Hauptverfasser: Seo, Jungho, Cho, Hanchul, Lee, Ju-kyung, Lee, Jinyoung, Busnaina, Ahmed, Lee, HeaYeon
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is developed to overcome resolution limits of photolithography. High aspect-ratio nanostructures with sub-100 nm of lindewidth were fabricated on wafer-scale substrate without nanolithography techniques. The DODE lithography process presented enabled to pave a way to overcome limitations of nanolithography processes and allowed to manufacture large-scale nanostructures using photolithography and thin film deposition and dry etching processes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4813738