Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

The origin of the green gap for GaInN/GaN quantum wells is investigated via temperature-dependent time-resolved photoluminescence spectroscopy. A strong correlation between nonradiative lifetimes and total strain energy is observed, although the wells are almost fully strained. We discuss this obser...

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Veröffentlicht in:	Applied physics letters 2013-07, Vol.103 (2)
Hauptverfasser:	Langer, Torsten, Jönen, Holger, Kruse, Andreas, Bremers, Heiko, Rossow, Uwe, Hangleiter, Andreas
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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