Detecting ZnSe secondary phase in Cu2ZnSnSe4 by room temperature photoluminescence
Secondary phases, such as ZnSe, occur in Cu2ZnSnSe4 and can be detrimental to the resulting solar cell performance. Therefore, it is important to have simple tools to detect them. We introduce subband gap defect excitation room temperature photoluminescence of ZnSe as a practical and non-destructive...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2013-06, Vol.102 (22) |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Secondary phases, such as ZnSe, occur in Cu2ZnSnSe4 and can be detrimental to the resulting solar cell performance. Therefore, it is important to have simple tools to detect them. We introduce subband gap defect excitation room temperature photoluminescence of ZnSe as a practical and non-destructive method to discern the ZnSe secondary phase in the solar cell absorber. The PL is excited by the green emission of an Ar ion laser and is detected in the energy range of 1.2–1.3 eV. A clear spatial correlation with the ZnSe Raman signal confirms this attribution. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4808384 |