Local detection of deep carrier traps in the pn-junction of silicon solar cells
Mesa-diodes, with fully preserved solar cell structure, were fabricated at various locations of silicon solar cell. Deep level transient spectroscopy was applied for detection of carrier traps in the mesa-diodes. The parameters of the traps suggest their relation to interstitial iron and/or iron-rel...
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Veröffentlicht in: | Applied physics letters 2013-07, Vol.103 (1) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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