Local detection of deep carrier traps in the pn-junction of silicon solar cells
Mesa-diodes, with fully preserved solar cell structure, were fabricated at various locations of silicon solar cell. Deep level transient spectroscopy was applied for detection of carrier traps in the mesa-diodes. The parameters of the traps suggest their relation to interstitial iron and/or iron-rel...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2013-07, Vol.103 (1) |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Mesa-diodes, with fully preserved solar cell structure, were fabricated at various locations of silicon solar cell. Deep level transient spectroscopy was applied for detection of carrier traps in the mesa-diodes. The parameters of the traps suggest their relation to interstitial iron and/or iron-related complexes. The density of the traps sharply falls with the distance from the pn-junction. Measurements using Schottky-diodes fabricated on top of the bulk substrate material of the cell, after etching off of the solar-cell structure, did not show the presence of the traps. The results suggest that defects, influencing the performance of solar cells, were formed in/near to the pn-junctions during their fabrication. The possible origin of the defects will be discussed. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4807142 |