Local detection of deep carrier traps in the pn-junction of silicon solar cells

Mesa-diodes, with fully preserved solar cell structure, were fabricated at various locations of silicon solar cell. Deep level transient spectroscopy was applied for detection of carrier traps in the mesa-diodes. The parameters of the traps suggest their relation to interstitial iron and/or iron-rel...

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Veröffentlicht in:Applied physics letters 2013-07, Vol.103 (1)
Hauptverfasser: Mchedlidze, T., Scheffler, L., Weber, J., Herms, M., Neusel, J., Osinniy, V., Möller, C., Lauer, K.
Format: Artikel
Sprache:eng
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Zusammenfassung:Mesa-diodes, with fully preserved solar cell structure, were fabricated at various locations of silicon solar cell. Deep level transient spectroscopy was applied for detection of carrier traps in the mesa-diodes. The parameters of the traps suggest their relation to interstitial iron and/or iron-related complexes. The density of the traps sharply falls with the distance from the pn-junction. Measurements using Schottky-diodes fabricated on top of the bulk substrate material of the cell, after etching off of the solar-cell structure, did not show the presence of the traps. The results suggest that defects, influencing the performance of solar cells, were formed in/near to the pn-junctions during their fabrication. The possible origin of the defects will be discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4807142