Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

Ultraviolet–ozone (UV/O3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO4. By applying UV/O3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced th...

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Veröffentlicht in:Journal of applied physics 2013-05, Vol.113 (18)
Hauptverfasser: Umeda, Kenichi, Miyasako, Takaaki, Sugiyama, Ayumu, Tanaka, Atsushi, Suzuki, Masayuki, Tokumitsu, Eisuke, Shimoda, Tatsuya
Format: Artikel
Sprache:eng
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Zusammenfassung:Ultraviolet–ozone (UV/O3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO4. By applying UV/O3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO4 films. As a result, high TFT performance, with values of on/off ratio, 108; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm2 V−1 s−1, was achieved.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4804667