A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor

In this work, the effect of biaxial strain on the electronic band structure of monolayers of MoS2 is investigated. The effective mass of carriers under different strain values is extracted and the achieved results are discussed. For the first time, we have assessed the effect of biaxial strain on the ultimate performance of MoS2-based double gate field effect transistors (DGFETs). The results indicate that by strain engineering, a significant performance improvement of MoS2-based DGFETs can be achieved.