Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature

We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current, which yields an electromotive field EISHE in the Pt l...

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Veröffentlicht in:Applied physics letters 2013-04, Vol.102 (15)
Hauptverfasser: Bottegoni, F., Ferrari, A., Cecchi, S., Finazzi, M., Ciccacci, F., Isella, G.
Format: Artikel
Sprache:eng
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Zusammenfassung:We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current, which yields an electromotive field EISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong Γ to L scattering, which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is in good agreement with the electron spin polarization expected for optical orientation at the direct gap of Ge.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4802268