Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy
We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within t...
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Veröffentlicht in: | Applied physics letters 2013-04, Vol.102 (15) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4802211 |