Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy

We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within t...

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Veröffentlicht in:Applied physics letters 2013-04, Vol.102 (15)
Hauptverfasser: Felts, Jonathan R., Law, Stephanie, Roberts, Christopher M., Podolskiy, Viktor, Wasserman, Daniel M., King, William P.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4802211