Direct band gap narrowing in highly doped Ge
Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band ga...
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Veröffentlicht in: | Applied physics letters 2013-04, Vol.102 (15) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are EBGN = 0.013 eV and ΔBGN = 10−21 eV/cm−3. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4802199 |