Direct band gap narrowing in highly doped Ge

Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band ga...

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Veröffentlicht in:Applied physics letters 2013-04, Vol.102 (15)
Hauptverfasser: Camacho-Aguilera, Rodolfo, Han, Zhaohong, Cai, Yan, Kimerling, Lionel C., Michel, Jurgen
Format: Artikel
Sprache:eng
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Zusammenfassung:Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are EBGN = 0.013 eV and ΔBGN = 10−21 eV/cm−3. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4802199