Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

GaP/Si heterostructures were grown by metal-organic chemical vapor deposition in which the formation of all heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins) were fully and simultaneously suppressed, as observed via transmission electron microscopy (TEM). T...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2013-04, Vol.102 (14)
Hauptverfasser:	Grassman, T. J., Carlin, J. A., Galiana, B., Yang, L.-M., Yang, F., Mills, M. J., Ringel, S. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!