Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

Direct bandgap transition engineering using stress, alloying, and quantum confinement is proposed to achieve high performing complementary n and p tunneling field effect transistors (TFETs) based on group IV materials. The critical tensile stress for this transition decreases in Ge1−xSnx for Sn cont...

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Veröffentlicht in:Applied physics letters 2013-03, Vol.102 (11)
Hauptverfasser: Kotlyar, R., Avci, U. E., Cea, S., Rios, R., Linton, T. D., Kuhn, K. J., Young, I. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Direct bandgap transition engineering using stress, alloying, and quantum confinement is proposed to achieve high performing complementary n and p tunneling field effect transistors (TFETs) based on group IV materials. The critical tensile stress for this transition decreases in Ge1−xSnx for Sn content 0≤x≤0.068, calculated with the Nonlocal Empirical Pseudopotential method. Direct sub eV bandgap leads to high ON current in both n and p Ge and Ge1−xSnx TFETs, simulated using the sp3d5s*-SO model. Ge and Ge1−xSnx show an advantage over III-V p TFETs achieving steep subthreshold operation, which is limited in III-V devices by their low density of electron states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4798283