Reducing thickness dependence of critical current density in GdBa2Cu3O7-δ thin films by addition of nanostructured defects

The effect of incorporating nanostructured defects in a form of BaSnO3 (BSO) nanorods on the thickness dependence of critical current density (Jc) in GdBa2Cu3O7-x (GdBCO) thin films was investigated. Pure and 2 wt. % BSO-doped GdBCO films were fabricated by the pulsed laser deposition with the thick...

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Veröffentlicht in:Journal of applied physics 2013-05, Vol.113 (17)
Hauptverfasser: Tran, D. H., Putri, W. B. K., Kang, B., Lee, N. H., Kang, W. N., Seong, W. K.
Format: Artikel
Sprache:eng
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Zusammenfassung:The effect of incorporating nanostructured defects in a form of BaSnO3 (BSO) nanorods on the thickness dependence of critical current density (Jc) in GdBa2Cu3O7-x (GdBCO) thin films was investigated. Pure and 2 wt. % BSO-doped GdBCO films were fabricated by the pulsed laser deposition with the thicknesses t of both films increasing from 0.2 μm to 1.5 μm. The magnetization data measured at 77 K with the field being applied parallel to the c-axis of the films showed two important improvements. First, the Jcs of the GdBCO film were significantly enhanced with the BSO addition. Second, the BSO-doped GdBCO films exhibited less formation of a-axis grains on the film surface than the pure GdBCO films. As a result, a reduced thickness dependence of Jc was obtained for the BSO-doped GdBCO films. The two improvements may be explained by assuming that the growth of BSO nanostructured defects observed in the cross-sectional transmission electron microscopy functioned as effective artificial pinning centers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4798233