Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope

Electronic potential measurements performed by low-temperature Kelvin probe force microscopy on silicon-on-insulator lateral nanoscale pn junctions are presented. The electronic potential landscape contains a region of enhanced potential induced by interdiffused dopants with deeper ground-state levels compared to bulk. The discrete dopant distribution can be observed in specific line profiles. In most line profiles, time-dependent potential fluctuations due to charging and discharging of dopants give rise to a localized-noise area corresponding to the depletion region.