Persistent photoconductivity effects in printed n-channel organic transistors
Persistent photoconductivity of top-gate n-type organic transistors is investigated. The irradiation of green light leads to a negative shift in transistor threshold voltage and an increase in sub-threshold current. These light-induced effects are enhanced when the gate is negatively biased during t...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2013-03, Vol.113 (9) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Persistent photoconductivity of top-gate n-type organic transistors is investigated. The irradiation of green light leads to a negative shift in transistor threshold voltage and an increase in sub-threshold current. These light-induced effects are enhanced when the gate is negatively biased during the light irradiation, and the recovery process is faster at 60 °C than at 25 °C. After storage in dark, full recovery is obtained for a transistor printed with a neat semiconductor, whereas for the device printed with a solution of the same semiconductor mixed with an insulator, only partial recovery is observed after four days at room temperature. Other stress conditions (irradiation with a positive gate bias, irradiation without bias, and bias under dark) do not change the threshold voltage or the sub-threshold current significantly. We attribute this photo phenomenon to holes trapped and released at the dielectric/semiconductor interface and a smaller number of positive fixed charges generated in the bulk of the semiconductor layer. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4794097 |