Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors

We investigate the charge transport mechanism and subgap density of states (DOS) in p-type Cu2O thin-film transistors (TFTs) using the bias and temperature dependence of the drain currents. Among several charge transport mechanisms, the experimental data are well matched with a multiple trapping and...

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Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (8)
Hauptverfasser: Jeong, Chan-Yong, Sohn, Joonsung, Song, Sang-Hun, Cho, In-Tak, Lee, Jong-Ho, Cho, Eou-Sik, Kwon, Hyuck-In
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Sprache:eng
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Zusammenfassung:We investigate the charge transport mechanism and subgap density of states (DOS) in p-type Cu2O thin-film transistors (TFTs) using the bias and temperature dependence of the drain currents. Among several charge transport mechanisms, the experimental data are well matched with a multiple trapping and release model, which suggests that the charge transport in the Cu2O TFT is mainly limited by trap states at grain boundaries or dielectric/semiconductor interface. The subgap DOS is extracted based on the Meyer-Neldel rule. Large density of subgap states is extracted, which is considered to be the reason of low mobility in fabricated Cu2O TFTs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4794061