Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors
We investigate the charge transport mechanism and subgap density of states (DOS) in p-type Cu2O thin-film transistors (TFTs) using the bias and temperature dependence of the drain currents. Among several charge transport mechanisms, the experimental data are well matched with a multiple trapping and...
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Veröffentlicht in: | Applied physics letters 2013-02, Vol.102 (8) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We investigate the charge transport mechanism and subgap density of states (DOS) in p-type Cu2O thin-film transistors (TFTs) using the bias and temperature dependence of the drain currents. Among several charge transport mechanisms, the experimental data are well matched with a multiple trapping and release model, which suggests that the charge transport in the Cu2O TFT is mainly limited by trap states at grain boundaries or dielectric/semiconductor interface. The subgap DOS is extracted based on the Meyer-Neldel rule. Large density of subgap states is extracted, which is considered to be the reason of low mobility in fabricated Cu2O TFTs. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4794061 |