Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors

Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors

A threshold voltage (Vth) dependence on channel length (L) is reported for amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs). Vth is found to shift negatively with decreasing L and the negative shift is drastic in TFTs with L 

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Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (8)
Hauptverfasser: Han Kang, Dong, Ung Han, Ji, Mativenga, Mallory, Hwa Ha, Su, Jang, Jin
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container_title Applied physics letters
container_volume 102
creator Han Kang, Dong
Ung Han, Ji
Mativenga, Mallory
Hwa Ha, Su
Jang, Jin
description A threshold voltage (Vth) dependence on channel length (L) is reported for amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs). Vth is found to shift negatively with decreasing L and the negative shift is drastic in TFTs with L 
doi_str_mv 10.1063/1.4793996
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title Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors
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