Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors
A threshold voltage (Vth) dependence on channel length (L) is reported for amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs). Vth is found to shift negatively with decreasing L and the negative shift is drastic in TFTs with L
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| Veröffentlicht in: | Applied physics letters 2013-02, Vol.102 (8) |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A threshold voltage (Vth) dependence on channel length (L) is reported for amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs). Vth is found to shift negatively with decreasing L and the negative shift is drastic in TFTs with L |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.4793996 |