Confinement and integration of magnetic impurities in silicon

Integration of magnetic impurities into semiconductor materials is an essential ingredient for the development of spintronic devices such as dilute magnetic semiconductors. While successful growth of ferromagnetic semiconductors was reported for III-V and II-VI compounds, efforts to build devices wi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (8)
Hauptverfasser: Rueß, Frank J., El Kazzi, Mario, Czornomaz, Lukas, Mensch, Philipp, Hopstaken, Marinus, Fuhrer, Andreas
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Integration of magnetic impurities into semiconductor materials is an essential ingredient for the development of spintronic devices such as dilute magnetic semiconductors. While successful growth of ferromagnetic semiconductors was reported for III-V and II-VI compounds, efforts to build devices with silicon technology were hampered by segregation and clustering of magnetic impurities such as manganese (Mn). Here, we report on a surface-based integration of Mn atoms into a silicon host. Control of Mn diffusion and low-temperature silicon epitaxy lead to confined Mn δ-layers with low interface trap densities, potentially opening the door for a new class of spintronic devices in silicon.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4792350